Akademik Portal | Dr. Öğr. Üyesi Seda Bengi Özgeçmiş Sayfası

Yükleniyor

Dr. Öğr. Üyesi Seda Bengi

Biyomedikal Cihaz Teknolojisi Programı
sbengi[at]baskent.edu.tr
0312 246 66 66 4034

Doktora, (2014), Gazi Üniversitesi, Fizik

Yüksek Lisans, (2009), Gazi Üniversitesi, Fizik

Lisans, (2005), Gazi Üniversitesi, Fizik

H-İndeks 5

Yayın Bilgileri


1 Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage, INDIAN JOURNAL OF PHYSICS, 98(0), 2024 Dr. Öğr. Üyesi Seda Bengi, Prof.Dr. Şemsettin Altındal, Doç.Dr. Sedat Zeyrek
2 The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures, Silicon, 16(0), 2024 Prof. Dr. Hayriye Gökçen Çetinkaya, Dr. Öğr. Üyesi Seda Bengi, Prof. Dr. Perihan Durmuş, Selçuk Demirezen, Prof. Dr. Şemsettin Altındal
3 Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p?Si structure with %0.5 Bi:ZnO interfacial layer, IONICS, 1(0), 2024 Dr. Öğr. Üyesi Seda Bengi, Prof.Dr. Hayriye Gökçen Çetinkaya, Prof. Dr. Şemsettin Altındal, Prof.Dr. Perihan Durmuş
4 The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures, PHYSICA SCRIPTA, 99(2), 2024 Prof. Dr. Hayriye Gökçen Çetinkaya, Dr. Öğr. Üyesi Seda Bengi, Doç.Dr. Ömer Sevgili, Prof. Dr. Şemsettin Altındal
5 Investigation of electrical characterization of Al/HfO2/p- Si structures in wide temperature range, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34(0), 2023 Dr. Öğr. Üyesi Seda Bengi, Dr. Öğr. Üyesi Esra Yükseltürk, Prof. Dr. Mehmet Mahir Bülbül
6 The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD), JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34(0), 2023 Dr. Öğr. Üyesi Esra Yükseltürk, Dr. Öğr. Üyesi Seda Bengi
7 Electrical Properties and Conduction Mechanism of Au/C20H12/n?Si Structure at High Temperatures Utilizing Impedance Measurements, JOURNAL OF ELECTRONIC MATERIALS, 52(0), 2023 Dr. Öğr. Üyesi Seda Bengi
8 The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD), PHYSICA SCRIPTA, 98(0), 2023 Dr. Öğr. Üyesi Seda Bengi
9 Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28(5), 2017 Dr. Öğr. Üyesi Seda Bengi, Kani Moraki, Do. Dr. Sedat Zeyrek, Prof. Dr. M. Mahir Bülbül, Prof. Dr. Şemsettin Altındal
10 Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16(3), 2014 Dr. Öğr. Üyesi Seda Bengi, Prof. Dr. M. Mahir Bülbül
11 Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures, CURRENT APPLIED PHYSICS, 13(8), 2013 Dr. Öğr. Üyesi Seda Bengi, Prof. Dr. M. Mahir Bülbül
12 Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier, MICROELECTRONIC ENGINEERING, 93(0), 2012 Dr. Öğr. Üyesi Seda Bengi, İ. Affendiyeva, Prof. Dr. M. Mahir Bülbül, Prof. Dr. Şemsettin Altındal
13 Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes, JOURNAL OF APPLIED PHYSICS, 108(3), 2010 Dr. Öğr. Üyesi Seda Bengi, Prof. Dr. M.Mahir Bülbül, Prof. Dr. İlbilge Dökme, Prof. Dr. Tuncay Tunç, Prof. Dr. Şemsettin Altındal


1 Analysis of the electrical characteristics of Al/ GaN/ p-GaAs Structure at high temperatures, 9th International Conference on Materials Science and Nanotechnology for Next Generation, 22.09.2022 Dr. Öğr. Üyesi Seda Bengi, Doç. Dr. Sedat Zeyrek
2 On the Negative Capacitance Behaviour at Low Frequencies in#13;Au/ITO-PVP/ n-Si Structures, 8th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2021), 14.06.2021 Dr. Öğr. Üyesi Seda Bengi
3 The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.10.2018 Dr. Öğr. Üyesi Seda Bengi
4 Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures, 2nd International Conference on Innovations in Natural Science and Engineering, 07.09.2018 Dr. Öğr. Üyesi Seda Bengi
5 Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.06.2018 Dr. Öğr. Üyesi Seda Bengi
6 The profile of frequency dependent interface states (Nss) and series resistance (Rs) in Au/C20H12/n-Si (MPS) Schottky diodes, 4th International Conference on Materials Science and Nanotechnology for Next Generation, 28.06.2017 Dr. Öğr. Üyesi Seda Bengi


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